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This process is experimental and the keywords may be updated as the learning algorithm improves. These keywords were added by machine and not by the authors. Recent development of new Si/Si-Ge heterojunction bipolar transistors (HBTs) grown by molecular beam epitaxy (MBE) and metal-organic-chemical vapor deposition (MOCVD) techniques on silicon substrates offer even higher speed performance for nextgeneration supercomputer applications. Furthermore, advances in silicon-processing technologies such as the development of optical and electron-beam (E-beam) lithographies, new metallization and etching techniques, as well as ion-implantation enable the fabrication of high-performance silicon BJTs with submicron geometries for very large scale integrated circuit (VLSIC) applications. As a result, silicon BJTs and FETs have replaced bulky vacuum tubes for various electronic circuits, computers, microwave, and power systems applications. The subsequent developments of silicon BJTs, metal-oxide-semiconductor field-effect transistors (MOSFETs), and ICs based on BJTs and MOSFET have changed the landscape of the entire electronics industry.
The BJT device is considered one of the most important electronic components used in modern integrated circuit (IC) chips for computers, communications and power systems, and in many other digital and analog electronic circuit applications. The invention of germanium alloy bipolar junction transistors (BJTs) by Bardeen, Brattain, and Shockley in 1948 has revolutionized the electronics industry.
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